Pentacene as semiconductor and high-P (VDF-TrFE) gate dielectric are successfully
demonstrated on fabric for future electronic textile (e-textile) applications. These devices
exhibited very high electrical performance with maximum () and average () field-effect
mobility values of~ 1.2 and~ 0.5 (±0.3), respectively, in the saturation regime and of~ 10 3 for
a low operating voltage of− 5 V, along with excellent electromechanical stability …