Lamination of flexible organic transistors on fabric for e-textile

S Rahi, V Raghuwanshi, P Saxena… - … on Electron Devices, 2022 - ieeexplore.ieee.org
IEEE Transactions on Electron Devices, 2022ieeexplore.ieee.org
Flexible organic field-effect transistors (OFETs) based on solution-processed TIPS-
Pentacene as semiconductor and high-P (VDF-TrFE) gate dielectric are successfully
demonstrated on fabric for future electronic textile (e-textile) applications. These devices
exhibited very high electrical performance with maximum () and average () field-effect
mobility values of~ 1.2 and~ 0.5 (±0.3), respectively, in the saturation regime and of~ 10 3 for
a low operating voltage of− 5 V, along with excellent electromechanical stability …
Flexible organic field-effect transistors (OFETs) based on solution-processed TIPS-Pentacene as semiconductor and high- P(VDF-TrFE) gate dielectric are successfully demonstrated on fabric for future electronic textile (e-textile) applications. These devices exhibited very high electrical performance with maximum ( ) and average ( ) field-effect mobility values of ~1.2 and ~0.5(±0.3) , respectively, in the saturation regime and of ~10 3 for a low operating voltage of −5 V, along with excellent electromechanical stability. Furthermore, these devices showed excellent environmental stability with almost unchanged electrical characteristics for 26 weeks. Moreover, devices showed high cyclic stability with stable ON/ OFF switching characterized up to 500 cycles.
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