As part of the efforts to enhance the near-field scanning optical microscopy and the detection of evanescent waves, a silicon Schottky diode, shaped as a truncated trapezoid photodetector and sharing a subwavelength pin-hole aperture, has been designed and simulated. Using finite elements method and two-dimensional advanced simulations, the detector has been horizontally shifted across a vertically oriented Gaussian beam, which is projected on top of the device. Both electrical and electro-optical simulations have been conducted. These results are promising toward the fabrication of a new generation of photodetector devices.