Laser-driven semiconductor switch for generating nanosecond pulses from a megawatt gyrotron
A laser-driven semiconductor switch (LDSS) employing silicon (Si) and gallium arsenide
(GaAs) wafers has been used to produce nanosecond-scale pulses from a 3 μs, 110 GHz
gyrotron at the megawatt power level. Photoconductivity was induced in the wafers using a
532 nm laser, which produced 6 ns, 230 mJ pulses. Irradiation of a single Si wafer by the
laser produced 110 GHz RF pulses with a 9 ns width and> 70% reflectance. Under the same
conditions, a single GaAs wafer yielded 24 ns 110 GHz RF pulses with> 78% reflectance …
(GaAs) wafers has been used to produce nanosecond-scale pulses from a 3 μs, 110 GHz
gyrotron at the megawatt power level. Photoconductivity was induced in the wafers using a
532 nm laser, which produced 6 ns, 230 mJ pulses. Irradiation of a single Si wafer by the
laser produced 110 GHz RF pulses with a 9 ns width and> 70% reflectance. Under the same
conditions, a single GaAs wafer yielded 24 ns 110 GHz RF pulses with> 78% reflectance …
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