Lasing characteristics of GaSb∕ GaAs self-assembled quantum dots embedded in an InGaAs quantum well
J Tatebayashi, A Khoshakhlagh, SH Huang… - Applied Physics …, 2007 - pubs.aip.org
The authors report the optical characteristics of Ga Sb∕ Ga As self-assembled quantum
dots (QDs) embedded in an InGaAs quantum well (QW). Variations in the In composition of
the QW can significantly alter the emission wavelength up to 1.3 μ m and emission
efficiency. Lasing operation at room temperature is obtained from a 2-mm-long device
containing five stacked GaSb QDs in In 0.13 Ga 0.87 As QWs at 1.026 μ m with a threshold
current density of 860 A∕ cm 2. The probable lasing transition involves electrons and …
dots (QDs) embedded in an InGaAs quantum well (QW). Variations in the In composition of
the QW can significantly alter the emission wavelength up to 1.3 μ m and emission
efficiency. Lasing operation at room temperature is obtained from a 2-mm-long device
containing five stacked GaSb QDs in In 0.13 Ga 0.87 As QWs at 1.026 μ m with a threshold
current density of 860 A∕ cm 2. The probable lasing transition involves electrons and …
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