… of the nucleation sites of SiC is a precondition for a lateral alignment of the SiC nuclei. In the
… Lateral aligned self-assembled SiC dots have been grown for the first time on Si substrates …

… of the SiC islands require the lateral migration of both Si and … of dots on the vicinal substrate,
migration of adatoms from one terrace to another across a step (for incorporation into dots) …

… We report on the lateral ordering of GaN islands on vicinal 0001 AlN surfaces by plasma …
the substrate,1 similar to the case of Ge/Si where dense arrays of islands can lead to a periodic …

… The plate-like NCs have a cubic (β) SiC structure, lateral size … SiC NCs due to its intrinsic
stoichiometric imbalance (4:1 C:Si… S16, where this alignment occurs during assembly and is …

… The resulting terraces promote an alignment of the SiC dots … lateral ordering of SiC dots in
linear chains and in dense dot … the SiC dots to that of the step bands formed on the Si surface …

… instance, that the Si face of hexagonal SiC polytypes of (0001… band gap and near its
conduction band edge, which points … in SiC/SiO2 structures may be the suppression of the lateral …

… alternative amorphous Si (a-Si) and amorphous SiC (a-SiC) … a-Si/SiC stacked structures
was used to prepare Si quantum … evaporated on the rear side of p-Si substrate and transparent …

… of the two interfaces of Si/SiC and SiC/diamond as well as … However, lateral inhomogeneities
on a sub- m scale are … , the epitaxial alignment is significantly better than for the -SiC layers …

… This work also demonstrates the possibility to introduce desired Si–C … Many vertically
aligned quasi-2D SiC sheets are found … From Figure 6c, we can find that the diffraction spot is …

Growth of m-plane GaN quantum nanostructures on an AlN buffer layer on m-plane SiC is
investigated. GaN nanostructures with different shapes are obtained depending on the AlN …