Layer structures for making direct metal-to-metal bonds at low temperatures in microelectronics
G Gao, GG Fountain Jr, LW Mirkarimi, R Katkar… - US Patent …, 2021 - Google Patents
Layer structures for making direct metal-to-metal bonds at low temperatures and shorter
annealing durations in microelectronics are provided. Example bonding interface structures
enable direct metal-to-metal bonding of interconnects at low annealing temperatures of 150
C. or below, and at a lower energy budget. The example structures provide a precise metal
recess distance for conductive pads and vias being bonded that can be achieved in high
volume manufacturing. The example structures provide a vertical stack of conductive layers …
annealing durations in microelectronics are provided. Example bonding interface structures
enable direct metal-to-metal bonding of interconnects at low annealing temperatures of 150
C. or below, and at a lower energy budget. The example structures provide a precise metal
recess distance for conductive pads and vias being bonded that can be achieved in high
volume manufacturing. The example structures provide a vertical stack of conductive layers …