Pattern transfer by deep anisotropic etch is a well-established technique for fabrication of
nanoscale devices and structures. For this technique to be effective, the resist material plays
a key role and must have a high resolution, reasonable sensitivity, and high etch selectivity
against the conventional silicon substrate or underlayer film. In this work, the lithographic
performance of two high etch resistance materials was evaluated: ZEP520A (Nippon Zeon
Co.) and mr-PosEBR (micro resist technology GmbH). Both materials are positive tone …