Self-assembled growth in combination with prepatterning yields ordered lines of Ge islands
on a planar Si (001) surface. The self-assembled Ge nanostructures are grown on top of a
15-period Si/SiGe superlattice, which is deposited on a prepatterned Si substrate. The
pattern consists of 10 nm deep trenches with a period of 250 nm. The superlattice translates
the surface modulation of the substrate into a strain-field modulation at the growth front of the
superlattice. This strain field modulation provides the template for the ordered nucleation of …