Low temperature growth of GaInNAs/GaAs quantum wells by metalorganic chemical vapor deposition using tertiarybutylarsine
Z Pan, T Miyamoto, D Schlenker, S Sato… - Journal of applied …, 1998 - pubs.aip.org
The low temperature growth of highly strained GaInNAs/GaAs quantum wells was
investigated by low-pressure metalorganic chemical vapor deposition (MOCVD) using
tertiarybutylarsine (TBAs) and dimethylhydrazine. We found that the incorporation behavior
of indium in the strained GaInAs layers at low growth temperature was very different from
that at high growth temperature. The N content dropped rapidly with increasing In content in
the strained GaInNAs layer. It is pointed out that the V/III ratio is an important growth …
investigated by low-pressure metalorganic chemical vapor deposition (MOCVD) using
tertiarybutylarsine (TBAs) and dimethylhydrazine. We found that the incorporation behavior
of indium in the strained GaInAs layers at low growth temperature was very different from
that at high growth temperature. The N content dropped rapidly with increasing In content in
the strained GaInNAs layer. It is pointed out that the V/III ratio is an important growth …
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