Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET
J Shimizu, T Ohashi, K Matsuura… - 2017 IEEE Electron …, 2017 - ieeexplore.ieee.org
2017 IEEE Electron Devices Technology and Manufacturing Conference …, 2017•ieeexplore.ieee.org
We investigate low-temperature formation process of sputtered-MoS 2 film. The MoS2 film
was formed by radio frequency (RF) sputtering. Then the sputtered-MoS 2 was annealed in
H2S at from 200 to 400° C. We find that the hydrogen sulfur (H 2 S) annealing compensate
for sulfur defects at low temperature significantly, resulting in a lower carrier density of 2–10
16 cm− 3.
was formed by radio frequency (RF) sputtering. Then the sputtered-MoS 2 was annealed in
H2S at from 200 to 400° C. We find that the hydrogen sulfur (H 2 S) annealing compensate
for sulfur defects at low temperature significantly, resulting in a lower carrier density of 2–10
16 cm− 3.
We investigate low-temperature formation process of sputtered-MoS 2 film. The MoS2 film was formed by radio frequency (RF) sputtering. Then the sputtered-MoS 2 was annealed in H2S at from 200 to 400°C. We find that the hydrogen sulfur (H 2 S) annealing compensate for sulfur defects at low temperature significantly, resulting in a lower carrier density of 2–10 16 cm −3 .
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