We present a quantitative analysis of the low-frequency noise in irradiated monolayer
graphene. In this study, we repeatedly irradiate a back-gated graphene transistor with argon
ions at 90 eV and measure its low-frequency noise and channel conductivity after each
irradiation. Our results indicate that the noise amplitude decreases monotonically with the
increasing density of vacancy defects. The combination of our low-frequency noise
measurements and carrier transport studies reveals that the mobility fluctuation model can …