Low-resistance Ti/Au ohmic contacts to Al-doped ZnO layers
We report on low-resistance ohmic contacts to the moderately doped n-type ZnO: Al (nd= 2×
10 17 cm− 3) obtained using Ti (30 nm)/Au (50 nm) metallization schemes. Annealed Ti/Au
contacts exhibit linear current–voltage characteristics, showing that high-quality ohmic
contacts are formed. The Ti/Au scheme produces a specific contact resistance of 2× 10− 4 Ω
cm 2 when annealed at 300° C for 1 min in a N 2 atmosphere.
10 17 cm− 3) obtained using Ti (30 nm)/Au (50 nm) metallization schemes. Annealed Ti/Au
contacts exhibit linear current–voltage characteristics, showing that high-quality ohmic
contacts are formed. The Ti/Au scheme produces a specific contact resistance of 2× 10− 4 Ω
cm 2 when annealed at 300° C for 1 min in a N 2 atmosphere.
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