MOSFET devices with polysilicon on single-layer HfO/sub 2/high-K dielectrics
L Kang, K Onishi, Y Jeon, BH Lee… - … Digest. IEDM (Cat …, 2000 - ieeexplore.ieee.org
International Electron Devices Meeting 2000. Technical Digest …, 2000•ieeexplore.ieee.org
MOSFETs and MOSCAPs of a single-layer thin HfO/sub 2/gate dielectric with dual
polysilicon gate were fabricated with self-aligned process and characterized. Polysilicon and
dopant activation processes were optimized such that leakage current and equivalent oxide
thickness (EOT) of HfO/sub 2/remain low (EOT of 12.0/spl Aring/. HfO/sub 2/with 1/spl
times/10/sup-3/A/cm/sup 2/at Vg= 1.0 V). Reasonable N-and P-MOSFET characteristics such
as subthreshold swing of 74 mV/decade and output currents were also demonstrated.
polysilicon gate were fabricated with self-aligned process and characterized. Polysilicon and
dopant activation processes were optimized such that leakage current and equivalent oxide
thickness (EOT) of HfO/sub 2/remain low (EOT of 12.0/spl Aring/. HfO/sub 2/with 1/spl
times/10/sup-3/A/cm/sup 2/at Vg= 1.0 V). Reasonable N-and P-MOSFET characteristics such
as subthreshold swing of 74 mV/decade and output currents were also demonstrated.
MOSFETs and MOSCAPs of a single-layer thin HfO/sub 2/ gate dielectric with dual polysilicon gate were fabricated with self-aligned process and characterized. Polysilicon and dopant activation processes were optimized such that leakage current and equivalent oxide thickness (EOT) of HfO/sub 2/ remain low (EOT of 12.0 /spl Aring/. HfO/sub 2/ with 1/spl times/10/sup -3/ A/cm/sup 2/ at Vg=1.0 V). Reasonable N- and P-MOSFET characteristics such as subthreshold swing of 74 mV/decade and output currents were also demonstrated.
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