Magnetotransport in modulation-doped In0. 53Ga0. 47As/In0. 52Al0. 48As heterojunctions: in-plane effective mass, quantum and transport mobilities of 2D electrons
Shubnikov–de Haas (SdH) and Hall effect measurements, performed in the temperature
range between 3.3 and 20 K and at magnetic fields up to 2.3 T, have been used to
investigate the electronic transport properties of lattice-matched In0. 53Ga0. 47As/In0.
52Al0. 48As heterojunctions. The spacer layer thickness (tS) in modulation-doped samples
was in the range between 0 and 400 Å. SdH oscillations indicate that two subbands are
already occupied for all samples except for that withtS= 400 Å. The carrier density in each …
range between 3.3 and 20 K and at magnetic fields up to 2.3 T, have been used to
investigate the electronic transport properties of lattice-matched In0. 53Ga0. 47As/In0.
52Al0. 48As heterojunctions. The spacer layer thickness (tS) in modulation-doped samples
was in the range between 0 and 400 Å. SdH oscillations indicate that two subbands are
already occupied for all samples except for that withtS= 400 Å. The carrier density in each …
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