Measurement of temperature-dependent stress in copper-filled silicon vias using polarized Raman spectroscopy
R Sugie, K Kosaka, H Seki, H Hashimoto… - Journal of Applied …, 2013 - pubs.aip.org
An experimental method to determine the temperature dependence of residual stress in
three-dimensional (3D) structures was developed using polarized Raman spectroscopy.
Stresses of a copper-filled silicon via at three temperatures, 223, 298, and 413 K were
derived by measuring the frequency shift of the optical phonons through the backscattering
geometry from the cross-section of the structure and assuming non-isotropic biaxial
(horizontal and depth) stresses on the cross-section. Both stress components changed from …
three-dimensional (3D) structures was developed using polarized Raman spectroscopy.
Stresses of a copper-filled silicon via at three temperatures, 223, 298, and 413 K were
derived by measuring the frequency shift of the optical phonons through the backscattering
geometry from the cross-section of the structure and assuming non-isotropic biaxial
(horizontal and depth) stresses on the cross-section. Both stress components changed from …
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