Metal-ferroelectric AlScN-semiconductor memory devices on SiC wafers
This Letter presents oriented growth and switching of thin (∼ 30 nm) co-sputtered
ferroelectric (FE) aluminum scandium nitride (AlScN) films directly on degenerately doped
4H silicon carbide (SiC) wafers. We fabricate and test metal ferroelectric semiconductor
capacitors, comprising of Al/Al 0.68 Sc 0.32 N/4H-SiC. Our devices exhibit asymmetric
coercive electric field values of− 5.55/+ 12.05 MV cm− 1 at 100 kHz for FE switching,
accounting for the voltage divided by the depletion region of the semiconducting SiC …
ferroelectric (FE) aluminum scandium nitride (AlScN) films directly on degenerately doped
4H silicon carbide (SiC) wafers. We fabricate and test metal ferroelectric semiconductor
capacitors, comprising of Al/Al 0.68 Sc 0.32 N/4H-SiC. Our devices exhibit asymmetric
coercive electric field values of− 5.55/+ 12.05 MV cm− 1 at 100 kHz for FE switching,
accounting for the voltage divided by the depletion region of the semiconducting SiC …
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