Method of forming a bottle-shaped trench by ion implantation
K Cheng, JE Faltermeier, C Radens - US Patent App. 12/187,917, 2009 - Google Patents
The present invention provides a method for form ing a bottle shaped trench in a substrate
by ion implantation Wherein trench capacitance is enhanced.[0008] Speci? cally, the
present invention provides a method of forming a bottle shaped trench in a substrate Which
comprises forming at least one trench having an upperportion and a loWer portion into a
semiconductor substrate, said at least one trench having vertical sideWalls that extend to a
common bottom Wall; implanting ions into said semiconduc tor substrate abutting the upper …
by ion implantation Wherein trench capacitance is enhanced.[0008] Speci? cally, the
present invention provides a method of forming a bottle shaped trench in a substrate Which
comprises forming at least one trench having an upperportion and a loWer portion into a
semiconductor substrate, said at least one trench having vertical sideWalls that extend to a
common bottom Wall; implanting ions into said semiconduc tor substrate abutting the upper …