Channel-to-substrate leakage in a FinFET device is prevented by inserting an insulating
layer between the semiconducting channel (fin) and the substrate during fabrication of the
device. Similarly, source/drain-to-substrate leakage in a Fin FET device is prevented by
isolating the source/drain regions from the Substrate by inserting an insulating layer
between the source/drain regions and the Substrate. Forming Such an insulating layer
isolates the conduction path from the Sub strate both physically and electrically, thus …