Methods of forming vertical transistor devices with self-aligned top source/drain conductive contacts
Forming a first sidewall spacer adjacent a vertically oriented channel semiconductor
structure (“VCS structure') and adjacent a cap layer, performing at least one planarization
process So as to planarize an insulating material and expose an upper Surface of the cap
layer and an upper Surface of the first spacer and removing a portion of the first spacer and
an entirety of the cap layer so as to thereby expose an upper surface of the VCS structure
and define a spacer/contact cavity above the VCS structure and the first spacer. The method …
structure (“VCS structure') and adjacent a cap layer, performing at least one planarization
process So as to planarize an insulating material and expose an upper Surface of the cap
layer and an upper Surface of the first spacer and removing a portion of the first spacer and
an entirety of the cap layer so as to thereby expose an upper surface of the VCS structure
and define a spacer/contact cavity above the VCS structure and the first spacer. The method …
以上显示的是最相近的搜索结果。 查看全部搜索结果