Mobility degradation of 28-nm bulk MOSFETs irradiated to ultrahigh total ionizing doses
… tally investigates the effects of total ionizing dose up to 1 Grad on the channel mobility of a
commercial 28-nm bulk CMOS process. … We observe a|VGB|-induced mobility degradation,
except for narrow-channel pMOSFETs irradiated at high TID levels that display a
|VGB|-independent μeff. This corresponds to their negligible θ at high TID levels. We also observe
a higher μeff reduction for narrow-channel … CONCLUSION Using the Y–function method,
we extract the channel mobility of commercial 28-nm bulk MOSFETs in strong inversion of …
commercial 28-nm bulk CMOS process. … We observe a|VGB|-induced mobility degradation,
except for narrow-channel pMOSFETs irradiated at high TID levels that display a
|VGB|-independent μeff. This corresponds to their negligible θ at high TID levels. We also observe
a higher μeff reduction for narrow-channel … CONCLUSION Using the Y–function method,
we extract the channel mobility of commercial 28-nm bulk MOSFETs in strong inversion of …
submitter: Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses
Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses -
CERN Document Server … Title Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to
Ultrahigh Total Ionizing Doses … Abstract Using the Y–function method, this paper
experimentally investigates the effects of total ionizing dose up to 1 Grad on the channel
mobility of a commercial 28-nm bulk CMOS process. …
CERN Document Server … Title Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to
Ultrahigh Total Ionizing Doses … Abstract Using the Y–function method, this paper
experimentally investigates the effects of total ionizing dose up to 1 Grad on the channel
mobility of a commercial 28-nm bulk CMOS process. …
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