Mobility studies of field-effect transistor structures basedon anthracene single crystals
AN Aleshin, JY Lee, SW Chu, JS Kim… - Applied Physics …, 2004 - pubs.aip.org
Organic field-effect transistors FET based on thin-film technologies have received
considerable attention within the last decades. 1, 2 As a result the room temperature field-
effect mobility FET for the best organic thin film transistors achieved FET 1.5 cm2/V s, 3
which is comparable with that of amorphous silicon FETs. 4 Since FET mobility increases
with increasing crystallinity in thin-film FETs, there is every reason to expect that FETs made
on the surface of free-standing single crystals of organic molecules is the promising route to …
considerable attention within the last decades. 1, 2 As a result the room temperature field-
effect mobility FET for the best organic thin film transistors achieved FET 1.5 cm2/V s, 3
which is comparable with that of amorphous silicon FETs. 4 Since FET mobility increases
with increasing crystallinity in thin-film FETs, there is every reason to expect that FETs made
on the surface of free-standing single crystals of organic molecules is the promising route to …
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