The energy consumed in computing one bit of information can be scaled down if the
transistor can operate at low supply voltage (V dd) and have low leakage current.
Subthreshold swing (SS) value of 60 mV/dec at room temperature (T= 300 K) is the
fundamental bottleneck of metal oxide semiconductor field effect transistor (MOSFET).
Furthermore, due to short channel effects (SCEs), scaling down the physical size of the
transistor leads in higher leakage current. Tunnel field effect transistor (TFET) is being …