Modeling and simulation of silicon epitaxial growth in Siemens CVD reactor

H Ni, S Lu, C Chen - Journal of crystal growth, 2014 - Elsevier
Siemens CVD reactor is an important chemical device for the production of polysilicon. The
chemical and physical phenomenon involved in the reactor is very complex. Understanding
the multispecies thermal fluid transport and its interaction with the gas/surface reactions is
crucial for an optimal design and operation of the reactor. In the present paper, a
mathematical model was constructed to describe the fluid dynamics, the heat and mass
transfer and the reaction kinetics of the epitaxial growth process in industrial CVD reactors. A …
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