Modeling of implantation and mixing damage during etching of SiO2 over Si in fluorocarbon plasmas
M Wang, MJ Kushner - Journal of Vacuum Science & Technology A, 2011 - pubs.aip.org
Energetic ion bombardment during plasma etching of microelectronics devices is necessary
to activate chemical process and define features through the ions' anisotropic trajectories.
These energetic fluxes can also cause damage and mixing of the constituents of crystalline
lattices. These properties are likely best modeled using molecular dynamics (MD)
simulations. The computational expense of these techniques makes feature scale
simulations difficult, and so motivates development of approximate methods that can be …
to activate chemical process and define features through the ions' anisotropic trajectories.
These energetic fluxes can also cause damage and mixing of the constituents of crystalline
lattices. These properties are likely best modeled using molecular dynamics (MD)
simulations. The computational expense of these techniques makes feature scale
simulations difficult, and so motivates development of approximate methods that can be …