Modeling of threading dislocation reduction in growing GaN layers
SK Mathis, AE Romanov, LF Chen, GE Beltz… - Journal of Crystal …, 2001 - Elsevier
In this work, a model is developed to treat threading dislocation (TD) reduction in (0001)
wurtzite epitaxial GaN thin films. The model is based on an approach originally proposed for
(001) FCC thin film growth and uses the concepts of mutual TD motion and reactions. We
show that the experimentally observed slow TD reduction in GaN can be explained by low
TD reaction probabilities due to TD line directions practically normal to the film surface. The
behavior of screw dislocations in III-nitride films is considered and is found to strongly impact …
wurtzite epitaxial GaN thin films. The model is based on an approach originally proposed for
(001) FCC thin film growth and uses the concepts of mutual TD motion and reactions. We
show that the experimentally observed slow TD reduction in GaN can be explained by low
TD reaction probabilities due to TD line directions practically normal to the film surface. The
behavior of screw dislocations in III-nitride films is considered and is found to strongly impact …
Modeling of threading dislocation reduction in growing GaN layers
SK Mathis, AE Romanov, LF Chen… - … status solidi (a), 2000 - Wiley Online Library
In this work, a model is developed to treat threading dislocation (TD) reduction in (0001)
wurtzite epitaxial GaN thin films. The model is based on an approach originally proposed for
(001) fcc thin film growth and uses the concepts of mutual TD motion and reactions. We
show that the experimentally observed slow TD reduction in GaN can be explained by low
TD reaction probabilities due to TD line directions practically normal to the film surface. The
behavior of screw dislocations in III‐nitride films is considered and is found to strongly …
wurtzite epitaxial GaN thin films. The model is based on an approach originally proposed for
(001) fcc thin film growth and uses the concepts of mutual TD motion and reactions. We
show that the experimentally observed slow TD reduction in GaN can be explained by low
TD reaction probabilities due to TD line directions practically normal to the film surface. The
behavior of screw dislocations in III‐nitride films is considered and is found to strongly …
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