Wide band-gap semiconductor materials such as SiC have created a contemporaneous worldwide interest in high power electronic applications and boosted the research possibilities. Consequently, the voltage handling capability of SiC Thyristor is being analyzed and improved. This paper presents the modelling and simulation of design variants of 4H-SiC Thyristor. In this work, a fabless approach is used to create the design variants of Thyristor in Silvaco TCAD. Key performance parameters such as drift region thickness and doping, anode width and area pertaining to the high blocking voltage are investigated by employing advanced numerical algorithms and physical models using mixed-mode simulation. Concepts of improving the electrical parameters like breakdown voltage, critical electric field and on-state resistance have been formulated here by employing structural parameters. Five design variants were simulated, which could block 1 kV, 3 kV, 5 kV, 10 kV and 15 kV. Moreover, the impact of variation of critical parameters i.e. drift region thickness (13μm to 220μm), doping (10¹⁴ cm⁻³ to 10²⁰ cm⁻³ ),anode width (2μm to 51μm) and area of device on electrical characteristics have been portrayed to have a clear insight on device design considerations. Obtained results are compared with theoretical data, demonstrating a good agreement between simulated and theoretical values. Finally, a trade-off between breakdown voltages and on-state resistance of simulated designs for specific range of doping concentrations is discussed.