Modification of thin carbon films by UVC light
We modified by UV C light single to few-layered nano-sized graphene films deposited by
pulsed laser deposition (PLD) on~ 300-nm SiO 2/Si substrates. The samples were irradiated
by UV C lamps (wavelength of 254 nm) for 15, 30, 60 and 90 minutes in air. The influence of
the modification was evaluated by following the changes in the X-ray photoelectron and
Raman spectra of the samples after UV C irradiation.
pulsed laser deposition (PLD) on~ 300-nm SiO 2/Si substrates. The samples were irradiated
by UV C lamps (wavelength of 254 nm) for 15, 30, 60 and 90 minutes in air. The influence of
the modification was evaluated by following the changes in the X-ray photoelectron and
Raman spectra of the samples after UV C irradiation.
Modification of thin carbon films by UVc light
We modified single-and few-layer nano-sized graphene films deposited by pulsed laser
deposition (PLD) on∼ 300-nm-thick SiO 2/Si substrates. The samples were irradiated by a
UV C lamp (wavelength of 254 nm) for 15 and 30 minutes in air atmosphere. The light was
directed almost parallel (about 2-2.5 arcdeg declination angle) to the films' surface. The
influence of the modification was evaluated by ellipsometry and X-ray photoelectron and
Raman spectroscopies. The results showed that the irradiation caused an increase of the …
deposition (PLD) on∼ 300-nm-thick SiO 2/Si substrates. The samples were irradiated by a
UV C lamp (wavelength of 254 nm) for 15 and 30 minutes in air atmosphere. The light was
directed almost parallel (about 2-2.5 arcdeg declination angle) to the films' surface. The
influence of the modification was evaluated by ellipsometry and X-ray photoelectron and
Raman spectroscopies. The results showed that the irradiation caused an increase of the …
以上显示的是最相近的搜索结果。 查看全部搜索结果