[引用][C] Modulated Photoluminescence of Germanium via Intense Terahertz Pulse Electric Fields
MAB Narreto, C Huang, DN Purschke… - Frontiers in …, 2018 - opg.optica.org
MAB Narreto, C Huang, DN Purschke, FA Hegmann
Frontiers in Optics, 2018•opg.optica.org… Hence, these reports illustrate the ability of intense THz electric fields to modulate the PL
of photoexcited semiconductors. Here, we explore the effect of intense THz electric fields on
the PL of germanium (Ge). Unlike Group III-V semiconductors such as GaAs, the study of
carrier dynamics through PL measurements of Group IV semiconductors has not advanced
at the same pace [5]. …
of photoexcited semiconductors. Here, we explore the effect of intense THz electric fields on
the PL of germanium (Ge). Unlike Group III-V semiconductors such as GaAs, the study of
carrier dynamics through PL measurements of Group IV semiconductors has not advanced
at the same pace [5]. …
Abstract
We show a nonlinear effect of intense terahertz pulse electric fields (> 200 kV/cm) on the photoluminescence of bulk germanium. Terahertz-pulse-induced direct-gap photoluminescence quenching is observed.
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