Molecular beam epitaxy of Zn1− xCdxSe epilayers and ZnSe/Zn1− xCdxSe superlattices
N Samarth, H Luo, JK Furdyna, RG Alonso… - Applied physics …, 1990 - pubs.aip.org
We have investigated the epitaxial growth of Zn, x Cd" Se epilayers and ZnSc/Zn, x Cd, Se
supedattices (O< x< 1) on (lOO) GaAs. Although thick epilayers of Zn, xCdx Se are prone to
defect formation with increasing Cd content, the structural and optical characteristics
improve remarkably when Zn, x Cd, Se is in the form of thin layers within ZnSe/Zn, x Cdx Se
superlattices. High quality superlattices can be grown for x< O. 35. The characterization of
these systems using transmission electron microscopy, x-ray diffraction, reflectivity, and …
supedattices (O< x< 1) on (lOO) GaAs. Although thick epilayers of Zn, xCdx Se are prone to
defect formation with increasing Cd content, the structural and optical characteristics
improve remarkably when Zn, x Cd, Se is in the form of thin layers within ZnSe/Zn, x Cdx Se
superlattices. High quality superlattices can be grown for x< O. 35. The characterization of
these systems using transmission electron microscopy, x-ray diffraction, reflectivity, and …