Multi-spectral optical absorption in substrate-free nanowire arrays
J Zhang, N Dhindsa, A Chia, J Boulanger… - Applied Physics …, 2014 - pubs.aip.org
A method is presented of fabricating gallium arsenide (GaAs) nanowire arrays of controlled
diameter and period by reactive ion etching of a GaAs substrate containing an indium
gallium arsenide (InGaP) etch stop layer, allowing the precise nanowire length to be
controlled. The substrate is subsequently removed by selective etching, using the same
InGaP etch stop layer, to create a substrate-free GaAs nanowire array. The optical
absorptance of the nanowire array was then directly measured without absorption from a …
diameter and period by reactive ion etching of a GaAs substrate containing an indium
gallium arsenide (InGaP) etch stop layer, allowing the precise nanowire length to be
controlled. The substrate is subsequently removed by selective etching, using the same
InGaP etch stop layer, to create a substrate-free GaAs nanowire array. The optical
absorptance of the nanowire array was then directly measured without absorption from a …