Nanofabrication of high aspect ratio (∼ 50: 1) sub-10 nm silicon nanowires using inductively coupled plasma etching
The development of nanofabrication techniques for creating high aspect ratio (∼ 50: 1) sub-
10 nm silicon nanowires (SiNWs) with smooth, uniform, and straight vertical sidewalls using
an inductively coupled plasma (ICP) etching process at 20 C is reported. In particular, to
improve the quality and flexibility of the pattern transfer process for high aspect ratio SiNWs,
hydrogen silsesquioxane, a high-resolution, inorganic, negative-tone resist for electron-
beam lithography has been used as both the resist for defining sub-10 nm patterns and the …
10 nm silicon nanowires (SiNWs) with smooth, uniform, and straight vertical sidewalls using
an inductively coupled plasma (ICP) etching process at 20 C is reported. In particular, to
improve the quality and flexibility of the pattern transfer process for high aspect ratio SiNWs,
hydrogen silsesquioxane, a high-resolution, inorganic, negative-tone resist for electron-
beam lithography has been used as both the resist for defining sub-10 nm patterns and the …
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