In this paper, an inverted silicon (Si) nanopyramid (iSiNP) surface structure with low aspect ratio and remarkable antireflection is developed through sequential treatments of NaOH and HF/CH 3 COOH/HNO 3 solutions to Si nanowire (SiNW)-textured Si wafers, which are prepared by traditional electroless chemical etching. The iSiNP/PEDOT: PSS hybrid solar cell is fabricated through conformally spin-coating poly (3.4-ethylene dioxythiophene): poly (styrenesulfonate)(PEDOT: PSS) onto the iSiNPs; it exhibits enhanced device performance owing to the improved junction and contact quality as compared to the SiNW/PEDOT: PSS counterpart. A power conversion efficiency (PCE) of 9.6% mainly contributed from an increased fill factor (FF) of 0.61 and improved open circuit voltage (V oc) of 0.53 V is delivered by the iSiNP/PEDOT: PSS solar cell. As a comparison, the SiNW/PEDOT: PSS structure delivers a 7.1% PCE with a FF of 0.45 and V oc of 0.46 V. Considering the submicro-scale characteristic dimensions, iSiNPs are expected to be applicable to highly efficient thin film Si/PEDOT: PSS hybrid solar cells.