Natural nonuniformities in the height of a Schottky barrier
VB Bondarenko, YA Kudinov, SG Ershov, VV Korablev - Semiconductors, 1998 - Springer
VB Bondarenko, YA Kudinov, SG Ershov, VV Korablev
Semiconductors, 1998•SpringerThis paper discusses natural nonuniformities in the height of a Schottky barrier caused by
the discreteness of impurity charges randomly distributed in the depletion region. The
parallel-diode model is used to show that these natural fluctuations in the effective barrier
height at a metal-semiconductor junction, on the average, do not exceed kT at room
temperature for doping levels less than or equal to 10 18 cm− 3.
the discreteness of impurity charges randomly distributed in the depletion region. The
parallel-diode model is used to show that these natural fluctuations in the effective barrier
height at a metal-semiconductor junction, on the average, do not exceed kT at room
temperature for doping levels less than or equal to 10 18 cm− 3.
Abstract
This paper discusses natural nonuniformities in the height of a Schottky barrier caused by the discreteness of impurity charges randomly distributed in the depletion region. The parallel-diode model is used to show that these natural fluctuations in the effective barrier height at a metal-semiconductor junction, on the average, do not exceed kT at room temperature for doping levels less than or equal to 1018 cm−3.
Springer
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