Visible near infrared (VNIR) transition‐metal dichalcogenides (TMDs) photodetectors have attracted attention due to their unique electronic and optoelectronic properties. Herein, the photodetection performance of a novel MoTe₂/ReSe₂ van der Waals heterojunction (vdW HJ) diode is studied in the VNIR region. Density functional theory calculations reveal the formation of type‐II band alignment, which is beneficial for the design of a MoTe₂/ReSe₂ HJ diode with better optoelectronic properties. A superb rectification ratio of ≈1 × 10⁴ is obtained via gate engineering, in which the ambipolar nature of MoTe₂ enables a transition from p⁺–i to n–n⁺ state. In addition, the diode exhibits an excellent figure of merit for photodetection. The excellent diode performance is demonstrated by a high responsivity of 5.6 × 10² A W⁻¹, an excellent detectivity of 8.1 × 10¹³ jones, and an external quantum efficiency of 9.5 × 10². Moreover, fast rise and decay times of 2 and 4 ms, respectively, are observed under illumination. The significant improvement is attributed to the combination of an intra‐TMD band‐to‐band transition and an inter‐TMD charge transfer process in the MoTe₂/ReSe₂ vdW HJ. This study provides an opportunity for advancing the prospects of TMDs in next generation optoelectronics.