Nitrogen-doped ZnO film fabricated via rapid low-temperature atomic layer deposition for high-performance ZnON transistors

X Ding, J Yang, C Qin, X Yang, T Ding… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
X Ding, J Yang, C Qin, X Yang, T Ding, J Zhang
IEEE Transactions on Electron Devices, 2018•ieeexplore.ieee.org
High-performance nitrogen-doped ZnO (ZnON)-based thin-film transistors (TFTs) were
fabricated by atomic layer deposition (ALD) with a rapid purging time of only 5 s at a
temperature as low as 150° C. It is the first time to report ALD ZnON TFT using NH 3 as N
source. It is found that ZnON TFT with a N: Zn atomic ratio of 1: 19 (ZnON 1: 19) exhibited
excellent properties, such as lower subthreshold swing of 0.47 V/decade and smaller ΔV th
of 0.71 V under the temperature stress from 25 to 105° C. The I ON and I OFF decreased as …
High-performance nitrogen-doped ZnO (ZnON)-based thin-film transistors (TFTs) were fabricated by atomic layer deposition (ALD) with a rapid purging time of only 5 s at a temperature as low as 150 °C. It is the first time to report ALD ZnON TFT using NH 3 as N source. It is found that ZnON TFT with a N: Zn atomic ratio of 1:19 (ZnON 1:19) exhibited excellent properties, such as lower subthreshold swing of 0.47 V/decade and smaller ΔV th of 0.71 V under the temperature stress from 25 to 105 °C. The I ON and I OFF decreased as N-doping concentration increased, and ZnON 1:19 TFT presented a high I ON /I OFF ratio of 1.75 × 10 7 . The density of state was calculated by temperature stress. Combining with the X-ray photoelectron spectroscopy analysis, we built a model to explain the reaction mechanism that the moderate amount of N doping could significantly suppress the creation of oxygen defects.
ieeexplore.ieee.org
展开收起
被引用次数：30 相关文章 所有 2 个版本
以上显示的是最相近的搜索结果。 查看全部搜索结果