Electronic devices are shrinking in size and new materials, for example gallium nitride (GaN)
are being introduced, resulting in higher dissipated power densities. Therefore, new and
novel technologies are required to remove the heat and to thermally characterise the
devices. A particular example of a device that will require these thermal management
technologies is the gallium arsenide (GaAs) planar Gunn diode [1] which is being developed
for millimetre-wave and terahertz (THz) frequencies, and in which the dissipated power …

Electronic devices are shrinking in size and new materials, for example gallium nitride (GaN)
are being introduced, resulting in higher dissipated power densities. Therefore, new and
novel technologies are required to remove the heat and to thermally characterise the
devices. A particular example of a device that will require these thermal management
technologies is the gallium arsenide (GaAs) planar Gunn diode which is being developed
for millimetre-wave and terahertz (THz) frequencies, and in which the dissipated power …