Novel integrable 80V silicon lateral trench power MOSFETs for high frequency DC-DC converters
KR Varadarajan, A Sinkar… - 2007 IEEE Power …, 2007 - ieeexplore.ieee.org
2007 IEEE Power Electronics Specialists Conference, 2007•ieeexplore.ieee.org
We propose novel integrable 80V silicon lateral trench power MOSFETs with low Figures of
Merit (R on times Q g and R on times Q gd) proving very attractive for high frequency DC-DC
converter applications. The performance of these lateral trench power MOSFETs was
simulated using a 2-D device simulator, and an analytical model was developed and
implemented in MAST HDL. Circuit simulations indicate a 4X reduction in the switching
losses over a comparable commercial device, especially at high switching frequencies (> …
Merit (R on times Q g and R on times Q gd) proving very attractive for high frequency DC-DC
converter applications. The performance of these lateral trench power MOSFETs was
simulated using a 2-D device simulator, and an analytical model was developed and
implemented in MAST HDL. Circuit simulations indicate a 4X reduction in the switching
losses over a comparable commercial device, especially at high switching frequencies (> …
We propose novel integrable 80V silicon lateral trench power MOSFETs with low Figures of Merit (R on times Q g and R on times Q gd ) proving very attractive for high frequency DC- DC converter applications. The performance of these lateral trench power MOSFETs was simulated using a 2-D device simulator, and an analytical model was developed and implemented in MAST HDL. Circuit simulations indicate a 4X reduction in the switching losses over a comparable commercial device, especially at high switching frequencies ( >500kHz).
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