A theoretical approach is presented that accounts for the influence of high pressure
background gases on the vapor-to-liquid nucleation process. The key idea is to treat the
carrier gas pressure as a perturbation parameter that modifies the properties of the
nucleating substance. Two important mechanisms are identified in this respect: With
increasing carrier gas pressure, the saturated vapor density tends to increase enhancement
effect, whereas the surface tension generally decreases. Several routes to obtain data for …