foundryplatform, with no process adaptations required. These … In this paper, we present two types of monolithic diodetemperaturesensors based on two standard building blocks, one with a multi-quantum well (MQW) layer stack and the other with a bulk InGaAsP quaternary layer stack (Q1.25), both available in the InP-basedgeneric photonic integration technology [10], [11]. The temperature was measured directly by detecting the change in the forward bias …
We developed two types of diode temperature sensors on the InP-based generic foundry platform, with no process adaptations required. These sensors showed sensitivity from -1.1 to - 2.1 mV/K and were not affected by on-chip light.