Optical and electrical responses of magnetron-sputtered amorphous Nb-doped TiO2 thin films annealed at low temperature
Abstract Nb-doped TiO 2 (TNO) thin films were prepared by annealing at 300° C for 30 min
after a magnetron-sputter process. A laser-irradiated post-annealing Raman scattering
analysis indirectly showed the possible formation of small size anatase TNO clusters within
the thin film matrix Although the TNO thin films were not crystallized, oxygen vacancies were
created by adding H 2 into the sputter gas during the deposition process. This improved the
conductivity and carrier concentration of the thin films. As the ratio of H 2 in sputter gas is f (H …
after a magnetron-sputter process. A laser-irradiated post-annealing Raman scattering
analysis indirectly showed the possible formation of small size anatase TNO clusters within
the thin film matrix Although the TNO thin films were not crystallized, oxygen vacancies were
created by adding H 2 into the sputter gas during the deposition process. This improved the
conductivity and carrier concentration of the thin films. As the ratio of H 2 in sputter gas is f (H …
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