Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric

SP Tiwari, P Srinivas, S Shriram, NS Kale… - Thin Solid Films, 2008 - Elsevier
This paper reports the use of hot-wire chemical vapour deposited (HWCVD) Silicon nitride
as a passivation layer for Organic Field Effect Transistors (OFETs). Firstly, the degradation
study of the OFETs is done with time. A thin (10–20 nm) layer of silicon nitride is deposited
on the OFETs, at a low temperature (< 90° C) by HWCVD process, to passivate them from
the ambient. Our results show that this technique is very effective in improving the stability of
the organic semiconductors (Poly-3-hexyl thiophene (P3HT) is used as a test case in this …

Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric

VR Rao - 2008 - dspace.bits-pilani.ac.in
This paper reports the use of hot-wire chemical vapour deposited (HWCVD) Silicon nitride
as a passivation layer for Organic Field Effect Transistors (OFETs). Firstly, the degradation
study of the OFETs is done with time. A thin (10–20 nm) layer of silicon nitride is deposited
on the OFETs, at a low temperature (< 90° C) by HWCVD process, to passivate them from
the ambient. Our results show that this technique is very effective in improving the stability of
the organic semiconductors (Poly-3-hexyl thiophene (P3HT) is used as a test case in this …
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