as a passivation layer for Organic Field Effect Transistors (OFETs). Firstly, the degradation
study of the OFETs is done with time. A thin (10–20 nm) layer of silicon nitride is deposited
on the OFETs, at a low temperature (< 90° C) by HWCVD process, to passivate them from
the ambient. Our results show that this technique is very effective in improving the stability of
the organic semiconductors (Poly-3-hexyl thiophene (P3HT) is used as a test case in this …