Thin polyaniline films for organic memristors were prepared by spin coating for the first time. The preparation condition effects on morphology and conductivity of the made-up films were studied. The fabricated films were used for assembling organic memristive devices. Current–voltage characteristics of the devices show hysteresis loop and resistive switching behavior under changing bias voltage, what allows their application as synapse-like elements. Found properties of these devices prove the spin-coating technique to be suitable for organic memristive device preparation. It is potentially able to become a simple, cheap, and scalable technology for mass production of polyaniline-based organic memristive devices.