measured in InAs/AlGaInAs/InP semiconductor lasers with an active region composed of
quantum confined structures in the form of short wires called quantum dashes. This
anisotropy is due to the polarization dependence of the transition matrix element in these
quantum nanostructures. The spectral dependence of the gain and linewidth enhancement
factor was investigated in a wavelength range from 1540 to 1640 nm at subthreshold current …