HfO 2-based resistive random-access memory devices are promising candidates for new
memory and computing applications. Hereby, scaling of the devices is a key issue, where
overall fundamental switching and conduction mechanisms can be easily influenced by
changes in the oxide layer thickness. This work addresses the oxide thickness-dependent
resistive switching characteristics in Cu/HfO 2/Pt memory devices through bipolar DC
switching characterization. Forming, reset, and set characteristics are investigated …