[HTML][HTML] Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry
K Kouda, Y Hijikata, S Yagi, H Yaguchi… - Journal of Applied …, 2012 - pubs.aip.org
The oxygen partial pressure dependence of the Silicon carbide (SiC) oxidation process was
investigated using in-situ spectroscopic ellipsometry at oxygen partial pressures between 1
and 0.02 atm for 4 H-SiC (0001) Si-and (000− 1) C-faces. Analyses of the interface structure
between the oxide and SiC indicate that the interface layer has a modified SiC-like structure
around 1 nm thick accompanied by oxide growth; the structure and thickness do not change
after an oxide growth of about 7 nm. The oxide thickness dependence of the growth rate at …
investigated using in-situ spectroscopic ellipsometry at oxygen partial pressures between 1
and 0.02 atm for 4 H-SiC (0001) Si-and (000− 1) C-faces. Analyses of the interface structure
between the oxide and SiC indicate that the interface layer has a modified SiC-like structure
around 1 nm thick accompanied by oxide growth; the structure and thickness do not change
after an oxide growth of about 7 nm. The oxide thickness dependence of the growth rate at …