Peaking PA bias circuit for an APT CMOS Doherty PA

J Hur, P Draxler, J Park, A Segoria… - 2017 IEEE Radio …, 2017 - ieeexplore.ieee.org
J Hur, P Draxler, J Park, A Segoria, V Aparin
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2017ieeexplore.ieee.org
This paper presents a peaking PA bias circuit for an Average Power Tracking (APT) CMOS
Doherty PA, where the common supply voltage changes as the target average power
changes. In order to have Doherty efficiency characteristics with APT, the peaking PA must
have an adaptive bias circuit that shifts the bias as the supply voltage changes, activating
the peaking PA at the correct backoff (6dB) from the Posat for that supply voltage. This bias
circuit is demonstrated on a CMOS Doherty PA using standard 0.18 um SOI. With the …
This paper presents a peaking PA bias circuit for an Average Power Tracking (APT) CMOS Doherty PA, where the common supply voltage changes as the target average power changes. In order to have Doherty efficiency characteristics with APT, the peaking PA must have an adaptive bias circuit that shifts the bias as the supply voltage changes, activating the peaking PA at the correct backoff (6dB) from the Posat for that supply voltage. This bias circuit is demonstrated on a CMOS Doherty PA using standard 0.18um SOI. With the proposed bias circuit, the Doherty PA has specification compliant WCDMA performance (with DPD) up to 29dBm Pout, with 40-50% PAE (from 25-29dBm Pout) as the supply voltages ranges from 1.5V to 4V.
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