Photoluminescence study of Si-doped (112̄0) a-plane GaN grown on (11̄02) r-plane sapphire by metalorganic chemical vapor deposition

HB Yu, H Chen, D Li, YJ Han, XH Zheng, Q Huang… - Journal of crystal …, 2004 - Elsevier
Reasonable quality Si-doped (1 1 2 ̄ 0) a-plane GaN have been grown by metalorganic
chemical vapor deposition on (1 1 ̄ 0 2) r-plane sapphire substrates. Optical properties of
the films were studied by photoluminescence spectroscopy. Our experimental results
suggest that not VGa but the VGa–ON complex is the key defect responsible for yellow
luminescence in GaN. At 12.9 K, free exciton A, donor bound exciton and exciton bound to
neutral acceptor (Ix), which are similar to (0001) GaN are observed. Different to (0001) GaN …
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