Physical-based analytical model of flexible a-IGZO TFTs accounting for both charge injection and transport
M Ghittorelli, F Torricelli… - 2015 IEEE …, 2015 - ieeexplore.ieee.org
2015 IEEE International Electron Devices Meeting (IEDM), 2015•ieeexplore.ieee.org
Here we show a new physical-based analytical model of a-IGZO TFTs. TFTs scaling from L=
200 μm to L= 15 μm and fabricated on plastic foil are accurately reproduced with a unique
set of parameters. The model is used to design a zero-VGS inverter. It is a valuable tool for
circuit design and technology characterization.
200 μm to L= 15 μm and fabricated on plastic foil are accurately reproduced with a unique
set of parameters. The model is used to design a zero-VGS inverter. It is a valuable tool for
circuit design and technology characterization.
Here we show a new physical-based analytical model of a-IGZO TFTs. TFTs scaling from L=200 μm to L=15 μm and fabricated on plastic foil are accurately reproduced with a unique set of parameters. The model is used to design a zero-VGS inverter. It is a valuable tool for circuit design and technology characterization.
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