Epitaxial graphene is promising material for future graphene-based applications including high frequency devices and chemical/biological sensors. Modifying the surface chemistry of graphene allows one to control its properties and thus provides a promising route towards further broadening the device application space for this unique material. Herein, we demonstrate the use of electron beam generated plasmas as a route towards controlled oxygen doping of epitaxial graphene. X-ray photoelectron spectroscopy, Raman spectroscopy and electrical measurements are used to track the oxygen incorporation and its influence on the structural and electrical properties of epitaxial graphene.