… point defects and their annealing in silicon-doped n-GaN have … and acceptor centres are
observed in irradiated n-GaN. The … of electrically active defects present in irradiated n-GaN after …

… unaltered in irradiated n-GaN. For moderately doped n-GaN with N Si in the mid 10 17 …
The production rates of point defects in electron- and gamma-irradiated n-GaN as well as in …

… for migration of native point defects in this material. If the native defects are immobile at room
… In this case the net effect in the n-GaN samples at the same irradiation dose should be the …

… in irradiated GaN. Electron irradiation offers a controlled method of introducing point defects…
In this letter, we answer this question by monitoring the changes induced in undoped n-GaN …

… of point defects through 6 MeV electron irradiation. The decrease in the EL efficiency in
LEDs subjected to irradiation with fluences above 5× 10 15 cm− 2 was closely correlated to the …

Proton irradiation effects on minority carrier diffusion length and defect introduction in
homoepitaxial and heteroepitaxial n-GaN | Journal of Applied Physics | AIP Publishing …

… Usually, the primary defects in irradiated semiconductors are Frenkel pairs. According to
theoretical considerations, the self-interstitials on both sublattices are expected to be deep …

… GaN, when subject to high energy ionizing radiation particles, produce point defects in the
material that are more dominated by extended disordered regions. Trap states also occur as a …

… 0.17 Al 0.83 N/GaN as compared to a traditional Al0.2Ga0.8 … irradiation produces simple
point defects in the nitride lattice,… the stable nitrogen interstitial defect in irradiated GaN.22 As …

… Protons, electrons and gamma rays typically produce point defects in GaN, in contrast to
neutron … By implication, the carrier removal in irradiated n-GaN should then be controlled by the …